Room temperature operation of mid-infrared diode lasers, LEDs and photodetectors is limited by non-radiative Auger and Shockley-Read recombination processes which become more severe at longer wavelengths. Our research is aimed at solving these problems using novel Sb-based III-V compound alloys and quantum nano-structured devices to design and fabricate new optoelectronic components.

 
 
We are interested in working with you to develop your applications
 
Further details of Mid-infrared Optoelectronics research at Lancaster is available on our web site.
 
For a wider view see the MIOMD conference page
 
 
Or see the Mid-infrared Network